Carbon nanotube array vias for interconnect applications

Carbon Nanotube Array Vias for Interconnect Applications

The material and electrical properties of the CNT single vias and array vias grown by microwave plasma-enhanced chemical vapor deposition were investigated. The diameters of multiwall carbon nanotubes (MWNTs) grown on the bottom electrode of Ta decrease with increasing pretreatment power and substrate temperature while the effects of the growth power and methane flow ratio are insignificant The...

Carbon Nanotube Composites for Electronic Interconnect Applications

Carbon Nanotube Interconnect Technologies for Future LSIs

Carbon nanotubes (CNTs) are attractive as nanosize structural elements from which devices can be constructed by bottom-up fabrication. A CNT is a macromolecule of carbon and is made by rolling a sheet of graphite into a cylindrical shape. CNTs exhibit excellent electrical properties that include current densities exceeding 109 A/cm2 and ballistic transport along the tube. Because of these facto...

Through silicon vias filled with planarized carbon nanotube bundles.

The feasibility of using carbon nanotube (CNT) bundles as the fillers of through silicon vias (TSVs) has been demonstrated. CNT bundles are synthesized directly inside TSVs by thermal chemical vapor deposition (TCVD). The growth of CNTs in vias is found to be highly dependent on the geometric dimensions and arrangement patterns of the vias at atmospheric pressure. The CNT-Si structure is planar...

Carbon Nanotube Array for Infrared Detection

We explore the basic science issues and device potential of our carbon nanotube-silicon (CNT-Si) heretorjunctions for infrared photodetection. We focus on the underlying mechanism of infrared photocurrent response, which is elucidated by a detailed study of the dependence of the photocurrent on modulation frequency and intensity of the incident infrared radiation. The photocurrent generation is...